Features: · 184 edge connector pads with 1mm pad spacing· 128 MB Direct RDRAM storage· Each RDRAMâ has 32 banks, for 256 banks total on module· Gold plated contacts· RDRAMs use Chip Scale Package (CSP)· Serial Presence Detect support· Operates from a 2.5 V supply· Low power and powerdown sel...
MC-4R128CPE6C: Features: · 184 edge connector pads with 1mm pad spacing· 128 MB Direct RDRAM storage· Each RDRAMâ has 32 banks, for 256 banks total on module· Gold plated contacts· RDRAMs use Chip Scale Pack...
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Symbol | Parameter | MIN. | MAX. | Unit |
VI,ABS | Voltage applied to any RSL or CMOS signal pad with respect to GND | -0.3 | VDD + 0.3 | V |
VDD,ABS | Voltage on VDD with respect to GND | -5.0 | VDD + 1.0 | V |
TSTORE | Storage temperature | -50 | +100 | °C |
The Direct Rambus RIMM MC-4R128CPE6C module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications of MC-4R128CPE6C where high bandwidth and low latency are required.
MC-4R128CPE6C modules consists of eight 128M Direct Rambus DRAM (Direct RDRAM™) devices (mPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.
Direct RDRAM MC-4R128CPE6C are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM MC-4R128CPE6C enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 % bus efficiency. The Direct RDRAM's MC-4R128CPE6C 32 banks support up to four simultaneous transactions per device.