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MC-45D32CD641

Features: · 33,554,432 words by 64 bits organization· Clock frequency Part number /CAS latency Clock frequency (MAX.) Module type MC-45D32CD641KFA-C75 CL = 2.5 133MHz DDR SDRAM CL = 2 100MHz Unbuffered DIMM MC-45D32CD641KFA-C80 CL = 2.5 125 MHz Design specification C...

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SeekIC No. : 004416082 Detail

MC-45D32CD641: Features: · 33,554,432 words by 64 bits organization· Clock frequency Part number /CAS latency Clock frequency (MAX.) Module type MC-45D32CD641KFA-C75 CL = 2.5 133MHz DDR SDRAM C...

MC-45D32CD641 Data Sheet

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Part Number:
MC-45D32CD641
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· 33,554,432 words by 64 bits organization
· Clock frequency
Part number /CAS latency Clock frequency (MAX.) Module type
MC-45D32CD641KFA-C75 CL = 2.5 133MHz DDR SDRAM
CL = 2 100MHz Unbuffered DIMM
MC-45D32CD641KFA-C80 CL = 2.5 125 MHz Design specification
CL = 2 100 MHz Rev.0.9 compliant
· Fully Synchronous Dynamic RAM with all signals except DM, DQS and DQ referenced to a positive clock edge
· Double Data Rate interface
Differential CLK (/CLK) input
Data inputs and DM are synchronized with both edges of DQS
Data outputs and DQS are synchronized with a cross point of CLK and /CLK
· Quad internal banks operation
· Possible to assert random column address in every clock cycle
· Programmable Mode register set
/CAS latency (2, 2.5)
Burst length (2, 4, 8)
Wrap sequence (Sequential / Interleave)
· Automatic precharge and controlled precharge
· CBR (Auto) refresh and self refresh
· 2.5 V ± 0.2 V Power supply for VDD
· 2.5 V ± 0.2 V Power supply for VDDQ
· SSTL_2 compatible with all signals
· 4,096 refresh cycles / 64 ms
· Burst termination by Precharge command and Burst stop command
· 184-pin dual in-line memory module (Pin pitch = 1.27 mm)
· Unbuffered type
· Serial PD


Pinout

Connection Diagram


Specifications

Parameter Symbol Condition Rating Unit
Voltage on power supply pin relative to VSS VCC   0.5 to +4.6 V
Voltage on input pin relative to VSS VT   0.5 to +4.6 V
Short circuit output current IO   50 mA
Power dissipation PD   12 W
Storage temperature Tstg   55 to +125 °C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
             permanent damage. The device is not meant to be operated under conditions outside the limits
             described in the operational section of this specification. Exposure to Absolute Maximum Rating
             conditions for extended periods may affect device reliability.


Description

The MC-45D32CD641 is a 33,554,432 words by 64 bits DDR synchronous dynamic RAM module on which 16 pieces of 128M DDR SDRAM: PD45D128842 are assembled.

MC-45D32CD641 provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.

Decoupling capacitors of MC-45D32CD641 are mounted on power supply line for noise reduction.




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