MC-45D16CB641

Features:

• 16,777,216 words by 64 bits organization
• Clock frequency
• Fully Synchronous Dynamic RAM with all signals except DM,DQS,DQ referenced to a positive clock edge
• Double Data Rate interface
   Differential CLK (/CLK) input
   Data inputs and DM are synchronized with both edges of DQS
   Data outputs and DQS are synchronized with a cross point of CLK and /CLK
• Quad internal banks operation
• Possible to assert random column address in every clock cycle
• Programmable Mode register set
   /CAS latency (2, 2.5)
   Burst length (2, 4, 8)
   Wrap sequence (Sequential / Interleave)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• 2.5 V ± 0.2 V Power supply for VDD
• 2.5 V ± 0.2 V Power supply for VDDQ
• SSTL_2 compatible with all signals
• 4,096 refresh cycles / 64 ms
• Burst termination by Precharge command and Burst stop command
• 184-pin dual in-line memory module (Pin pitch = 1.27 mm)
• Unbuffered type
• Serial PD 


Pinout




Specifications

Parameter	Symbol	Condition	Rating	Unit
Voltage on power supply pin relative to VSS	VDD, VDDQ		0.5 to +3.6	V
Voltage on input pin relative to GND	VT		0.5 to +3.6	V
Short circuit output current	IO		50	mA
Power dissipation	PD		12	W
Storage temperature	Tstg		55 to +125

Description

The MC-45D16CB641 is a 16,777,216 words by 64 bits DDR synchronous dynamic RAM module on which 8 pieces of 128M DDR SDRAM: µPD45D128842 are assembled.

MC-45D16CB641 provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors of MC-45D16CB641 are mounted on power supply line for noise reduction.