MC-458CB641ES

Features:

• 8,388,608 words by 64 bits organization
• Clock frequency and access time from CLK
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0, BA1 (Bank Select)
• Programmable burst-length: 1, 2, 4, 8 and Full Page
• Programmable wrap sequence (Sequential / Interleave)
• Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• Single 3.3 V ±0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination by Burst Stop command and Precharge command
• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
• Unbuffered type
• Serial PD


Pinout




Specifications

Parameter	Symbol	Condition	Rating	Unit
Voltage on power supply pin relative to GND	VCC		0.5 to +4.6	V
Voltage on input pin relative to GND	VT		0.5 to +4.6	V
Short circuit output current	IO		50	mA
Power dissipation	PD		4	W
Operating ambient temperature	TA		0 to 70	°C
Storage temperature	Tstg		55 to +125	°C

Description

The MC-458CB641ES and MC-458CB641PS are 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

MC-458CB641ES and MC-458CB641PS provide high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors of MC-458CB641ES and MC-458CB641PS are mounted on power supply line for noise reduction.