MC-458CA726

Features:

• 8,388,608 words by 72 bits organization (ECC Type)
• Clock frequency and access time from CLK
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and full page)
• Programmable wrap sequence (sequential / interleave)
• Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ± 10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles /64 ms
• Burst termination by Burst Stop command and Precharge command
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
• Unbuffered type
• Serial PD


Specifications

Parameter	Symbol	Condition	Ratings	Unit
Voltage on power supply pin relative to GND	VCC		0.5 to +4.6	V
Voltage on input pin relative to GND	VT		0.5 to +4.6	V
Short circuit output current	IO		50	mA
Power dissipation	PD		5	W
Operating ambient temperature	TA		0 to 70
Storage temperature	Tstg		55 to +150

Description

The MC-458CA726EFB and MC-458CA726PFB are 8,388,608 words by 72 bits synchronous dynamic RAM module
on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.
MC-458CA726EFB and MC-458CA726PFB provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.