MC-4564EC726

Features:

67,108,864 words by 72 bits organization (ECC type)
Clock frequency and access time from CLK
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential / Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10 Ω ± 10 % of series resistor
Single 3.3 V ± 0.3 V power supply
LVTTL compatible
4,096 refresh cycles / 64 ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Registered type
Serial PD
Stacked monolithic technology


Specifications

Parameter	Symbol	Condition	Ratings	Unit
Voltage on power supply pin relative to GND	VCC		0.5 to +4.6	V
Voltage on input pin relative to GND	VT		0.5 to +4.6	V
Short circuit output current	IO		50	mA
Power dissipation	PD		40	W
Operating ambient temperature	TA		0 to 70
Storage temperature	Tstg		55 to +150

Description

The MC-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: µPD45128441 are assembled.
MC-4564EC726 provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.