MC-4532CD647

Features:

· 33,554,432 words by 64 bits organization
· Clock frequency and access time from CLK.
· Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
· Pulsed interface
· Possible to assert random column address in every cycle
· Quad internal banks controlled by BA0 and BA1 (Bank Select)
· Programmable burst-length (1, 2, 4, 8 and full page)
· Programmable wrap sequence (Sequential / Interleave)
· Programmable /CAS latency (2, 3)
· Automatic precharge and controlled precharge
· CBR (Auto) refresh and self refresh
· All DQs have 10 W ±10 % of series resistor
· Single 3.3 V ± 0.3 V power supply
· LVTTL compatible
· 4,096 refresh cycles/64 ms
· Burst termination by Burst Stop command and Precharge command
· 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
· Unbuffered type
· Serial PD


Description

The MC-4532CD647EF and MC-4532CD647PF are 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 128M SDRAM: mPD45128841 are assembled.

MC-4532CD647EF and MC-4532CD647PF provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.

Decoupling capacitors of MC-4532CD647EF and MC-4532CD647PF are mounted on power supply line for noise reduction.