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MC-4516CD641ES

Features: · 16,777,216 words by 64 bits organization· Clock frequency and access time from CLK Part number /CAS latency Clock frequency (MAX.) Access time from CLK (MAX.) MC-4516CD64ES-A80 CL = 3 125MHz 6 ns CL = 2 100MHz 6 ns MC-4516CD64PS-A10B CL = 3 100MHz 6 ns CL ...

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SeekIC No. : 004416043 Detail

MC-4516CD641ES: Features: · 16,777,216 words by 64 bits organization· Clock frequency and access time from CLK Part number /CAS latency Clock frequency (MAX.) Access time from CLK (MAX.) MC-4516CD64ES-...

MC-4516CD641ES Data Sheet

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Part Number:
MC-4516CD641ES
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· 16,777,216 words by 64 bits organization
· Clock frequency and access time from CLK
Part number /CAS latency Clock frequency (MAX.) Access time from CLK (MAX.)
MC-4516CD64ES-A80 CL = 3 125MHz 6 ns
CL = 2 100MHz 6 ns
MC-4516CD64PS-A10B CL = 3 100MHz 6 ns
CL = 2 77 MHz 7 ns
MC-4516CD641PS-A80 CL = 3 125MHz 6 ns
CL = 2 100MHz 6 ns
MC-4516CD641PS-A10 CL = 3 100MHz 6 ns
CL = 2 77 MHz 7 ns
· Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
· Pulsed interface
· Possible to assert random column address in every cycle
· Quad internal banks controlled by BA0, BA1 (Bank Select)
· Programmable burst-length (1, 2, 4, 8 and Full Page)
· Programmable wrap sequence (Sequential / Interleave)
· Programmable /CAS latency (2, 3)
· Automatic precharge and controlled precharge
· CBR (Auto) refresh and self refresh
· Single 3.3V ±0.3V power supply
· LVTTL compatible
· 4,096 refresh cycles/64 ms
· Burst termination by Burst Stop command and Precharge command
· 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
· Unbuffered type
· Serial PD


Pinout

Connection Diagram


Specifications

Parameter Symbol Condition Rating Unit
Voltage on power supply pin relative to GND VCC 0.5 to +4.6 V
Voltage on input pin relative to GND VT 0.5 to +4.6 V
Short circuit output current IO 50 mA
Power dissipation PD 8 W
Operating ambient temperature TA 0 to +70 °C
Storage temperature Tstg 55 to +125 °C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
              permanent damage. The device is not meant to be operated under conditions outside the limits
             described in the operational section of this specification. Exposure to Absolute Maximum Rating
             conditions for extended periods may affect device reliability.


Description

The MC-4516CD641ES and MC-4516CD641PS are 16,777,216 words by 64 bits synchronous dynamic RAM
module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: mPD45128163 are assembled.

MC-4516CD641ES and MC-4516CD641PS provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.

Decoupling capacitors of MC-4516CD641ES and MC-4516CD641PS are mounted on power supply line for noise reduction.




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