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MBT6429DW1T1G

Transistors Bipolar (BJT) 200mA 55V NPN

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SeekIC No. : 00203743 Detail

MBT6429DW1T1G: Transistors Bipolar (BJT) 200mA 55V NPN

MBT6429DW1T1G Data Sheet

floor Price/Ceiling Price

US $ .05~.08 / Piece | Get Latest Price
Part Number:
MBT6429DW1T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.08
  • $.07
  • $.06
  • $.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 45 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 500 at 0.01 mA at 5 V Configuration : Dual
Maximum Operating Frequency : 700 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-88
Packaging : Reel    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Collector- Emitter Voltage VCEO Max : 45 V
Configuration : Dual
Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 500 at 0.01 mA at 5 V
Maximum Operating Frequency : 700 MHz
Package / Case : SC-88


Parameters:

Technical/Catalog InformationMBT6429DW1T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)45V
Current - Collector (Ic) (Max)200mA
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 10A, 5V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Frequency - Transition700MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MBT6429DW1T1G
MBT6429DW1T1G
MBT6429DW1T1GOSCT ND
MBT6429DW1T1GOSCTND
MBT6429DW1T1GOSCT



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