MBT3906DW1T1

Transistors Bipolar (BJT) 200mA 40V Dual PNP

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SeekIC No. : 00214535 Detail

MBT3906DW1T1: Transistors Bipolar (BJT) 200mA 40V Dual PNP

floor Price/Ceiling Price

Part Number:
MBT3906DW1T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 60 at 0.1 mA at 1 V Configuration : Dual
Maximum Operating Frequency : 250 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-363
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Configuration : Dual
Package / Case : SOT-363
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 60 at 0.1 mA at 1 V
Maximum Operating Frequency : 250 MHz (Min)


Features:

• hFE, 100−300
• Low VCE(sat), 3 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• Pb−Free Package is Available



Specifications

Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −40 Vdc
Collector−Base Voltage VCBO −40 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC −200 mAdc
Electrostatic Discharge ESD HBM>16000,
MM>2000
V



Description

The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.


Parameters:

Technical/Catalog InformationMBT3906DW1T1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor Type2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)200mA
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Frequency - Transition250MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MBT3906DW1T1
MBT3906DW1T1
MBT3906DW1T1OSCT ND
MBT3906DW1T1OSCTND
MBT3906DW1T1OSCT



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