Transistors Bipolar (BJT) 200mA 60V Dual NPN
MBT3904DW1T1: Transistors Bipolar (BJT) 200mA 60V Dual NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.2 A |
DC Collector/Base Gain hfe Min : | 40 at 0.1 mA at 1 V | Configuration : | Dual |
Maximum Operating Frequency : | 300 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-363 |
Packaging : | Reel |
Rating | Symbol | Voltage | Unit |
CollectorEmitter Voltage | V CEO | V | |
MBT3904DW1T1 (NPN) | 40 | ||
MBT3906DW1T1 (PNP) | -40 | ||
CollectorBase Voltage | V CBO | V | |
MBT3904DW1T1 (NPN) | 60 | ||
MBT3906DW1T1 (PNP) | -40 | ||
EmitterBase Voltage | V EBO | V | |
MBT3904DW1T1 (NPN) | 6.0 | ||
MBT3906DW1T1 (PNP) | -5.0 | ||
Collector Current -Continuous | I C | mAdc | |
MBT3904DW1T1 (NPN) | 200 | ||
MBT3906DW1T1 (PNP) | 200 | ||
Electrostatic Discharge | ESD | HBM>16000, | V |
MM>2000 |
Technical/Catalog Information | MBT3904DW1T1 |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 200mA |
Power - Max | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
Frequency - Transition | 300MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
Packaging | Cut Tape (CT) |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MBT3904DW1T1 MBT3904DW1T1 MBT3904DW1T1OSCT ND MBT3904DW1T1OSCTND MBT3904DW1T1OSCT |