Features: • Compact Package Ideal for Automated Handling• Short Heat Sink Tab Manufactured - Not Sheared• Highly Stable Oxide Passivated Junction• Guardring for Overvoltage Protection• Low Forward Voltage Drop• Monolithic Dual Die Construction. May be Paralleled...
MBRV7030CTL: Features: • Compact Package Ideal for Automated Handling• Short Heat Sink Tab Manufactured - Not Sheared• Highly Stable Oxide Passivated Junction• Guardring for Overvoltage P...
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Characteristic | Symbol | Value | Unit |
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VRM |
30 | V |
Average Rectified Forward Current (At Rated VR, TC = 135°C) Per Leg Per Package |
IO | 35 70 |
A |
Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) Per Leg |
IFRM | 70 | A |
Non-Repetitive Peak Surge Current Per Package (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) |
IFSM | 500 | A |
Storage Temperature | TSTG | -55 to +150 | °C |
Operating Junction Temperature | Tj | -55 to +125 | °C |
Voltage Rate of Change (Rated VR, TJ = 25°C) | dv/dt | 10000 | V/s |
Employing the MBRV7030CTL Schottky Barrier principle in a large area metaltosilicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.