MBRP60035CTL

Schottky (Diodes & Rectifiers) 600A 35V Low Vf

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SeekIC No. : 00194895 Detail

MBRP60035CTL: Schottky (Diodes & Rectifiers) 600A 35V Low Vf

floor Price/Ceiling Price

Part Number:
MBRP60035CTL
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/27

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Product Details

Quick Details

Product : Schottky Diodes Peak Reverse Voltage : 35 V
Forward Continuous Current : 600 A Max Surge Current : 4000 A
Configuration : Dual Common Cathode Forward Voltage Drop : 0.57 V at 300 A
Maximum Reverse Leakage Current : 3000 uA Operating Temperature Range : - 55 C to + 150 C
Mounting Style : SMD/SMT Package / Case : POWERTAP II
Packaging : Tray    

Description

Recovery Time :
Maximum Power Dissipation :
Mounting Style : SMD/SMT
Product : Schottky Diodes
Maximum Reverse Leakage Current : 3000 uA
Operating Temperature Range : - 55 C to + 150 C
Configuration : Dual Common Cathode
Peak Reverse Voltage : 35 V
Packaging : Tray
Forward Continuous Current : 600 A
Max Surge Current : 4000 A
Package / Case : POWERTAP II
Forward Voltage Drop : 0.57 V at 300 A


Specifications

Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35
Volts
Average Rectified Forward Current Per Leg
(At Rated VR) TC = +100°C Per Device
IF(AV)
300
600
Amps
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz) TC = +100°C
IFRM
300
Amps
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
4000
Amps
Peak Repetitive Reverse Surge Current (2 s, 1 kHz)
IRRM
2
Amp
Storage Temperature
Tstg
55 to +150
°C
Operating Junction Temperature
TJ
55 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/s



Description

The MBRP60035CTL SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features:
• Dual Diode Construction - May Be Paralleled for Higher Current Output
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 150°C Operating Junction Temperature
• Recyclable Epoxy
• Guaranteed Reverse Avalanche Energy Capability
• Improved Mechanical Ratings




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