MBRP40045CTL

Schottky (Diodes & Rectifiers) 400A 45V Low Vf

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SeekIC No. : 00194952 Detail

MBRP40045CTL: Schottky (Diodes & Rectifiers) 400A 45V Low Vf

floor Price/Ceiling Price

Part Number:
MBRP40045CTL
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/27

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Product Details

Quick Details

Product : Schottky Diodes Peak Reverse Voltage : 45 V
Forward Continuous Current : 400 A Max Surge Current : 2500 A
Configuration : Dual Common Cathode Forward Voltage Drop : 0.73 V
Maximum Reverse Leakage Current : 10000 uA Operating Temperature Range : - 55 C to + 150 C
Mounting Style : SMD/SMT Package / Case : POWERTAP II
Packaging : Tray    

Description

Recovery Time :
Maximum Power Dissipation :
Mounting Style : SMD/SMT
Product : Schottky Diodes
Peak Reverse Voltage : 45 V
Forward Voltage Drop : 0.73 V
Operating Temperature Range : - 55 C to + 150 C
Configuration : Dual Common Cathode
Packaging : Tray
Maximum Reverse Leakage Current : 10000 uA
Forward Continuous Current : 400 A
Max Surge Current : 2500 A
Package / Case : POWERTAP II


Features:

• Dual Diode Construction - May be Paralleled for Higher Current Output
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 150°C Operating Junction Temperature
• Recyclable Epoxy
• Guaranteed Reverse Avalanche Energy Capability
• Improved Mechanical Ratings



Specifications

Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current Per Leg
(At Rated VR) TC = +100°C Per Device
IF(AV)
200
400
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz) TC = +100°C
IFRM
400
A
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
2500
A
Peak Repetitive Reverse Surge Current (2 s, 1 kHz)
IRRM
2
A
Storage Temperature
Tstg
55 to +150
°C
Operating Junction Temperature
TJ
55 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/s



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