Features: ·Guard ring for transient protection·Low power loss,high efficiency·High current capability,low VF·High surge capacity·Plastic package has UL flammability classification 94V-0·Metal of silicon rectifier , majority carrier conduction·For use in low voltage,high frequency inverters,freewhe...
MBRF2030CT: Features: ·Guard ring for transient protection·Low power loss,high efficiency·High current capability,low VF·High surge capacity·Plastic package has UL flammability classification 94V-0·Metal of sil...
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CHARACTERISTICS |
SYMBOL |
MBRF 2030CT |
MBRF 2040CT |
MBRF 2050CT |
MBRF 2060CT |
MBRF 2080CT |
MBRF 20100CT |
MBRF 20150CT |
UNIT |
Maximum Recurrent Peak Reverse Voltage |
VRRM |
30 |
40 |
50 |
60 |
80 |
100 |
150 |
V |
Maximum RMS Voltage |
VRMS |
21 |
28 |
35 |
42 |
56 |
70 |
105 |
V |
Maximum DC Blocking Voltage |
VDC |
30 |
40 |
50 |
60 |
80 |
100 |
150 |
V |
Maximum Average Forward Rectified Current ( See Fig.1) |
I(AV) |
20.0 |
A | ||||||
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load (JEDEC Method) |
IFSM |
150 |
A | ||||||
Peak Forward IF=10A @TJ=25 Voltage (Note1) IF=10A @TJ=125 IF=20A @TJ=25 IF=20A @TJ=125 |
VF |
0.84 0.72 - 0.57 |
0.95 0.85 0.80 0.70 |
0.95 0.85 0.85 0.75 |
0.95 0.85 1.05 0.95 |
V | |||
Maximum DC Reverse Current @TJ=25 at Rated DC Bolcking Voltage @TJ=125 |
IR |
0.1 15 |
0.1 10 |
0.1 7.5 |
0.1 5.0 |
mA | |||
Typical Junction Capacitance (Note2) |
CJ |
400 |
320 |
pF | |||||
Typical Thermal Resistance (Note3) |
RJC |
1.5 |
3.5 |
/W | |||||
Operating Temperature Range |
TJ |
-55 to +150 |
|||||||
Storage Temperature Range |
TSTG |
-55 to +175 |
NOTES:1.300us pulse width,2% duty cycle. 2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC. 3.Thermal resistance junction to case.