MBRF1630

Features: Guard ring for transient protectionLow power loss,high efficiencyHigh current capability,low VFHigh surge capacityPlastic package has UL flammability classification 94V-0Metal of silicon rectifier , majority carrier conductionFor use in low voltage,high frequency inverters,free wheeling,...

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SeekIC No. : 004414596 Detail

MBRF1630: Features: Guard ring for transient protectionLow power loss,high efficiencyHigh current capability,low VFHigh surge capacityPlastic package has UL flammability classification 94V-0Metal of silicon r...

floor Price/Ceiling Price

Part Number:
MBRF1630
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

Guard ring for transient protection
Low power loss,high efficiency
High current capability,low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
Metal of silicon rectifier , majority carrier conduction
For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications



Specifications

Symbol Type Number MBRF1630
MBRF1640

MBRF1650

MBRF1660 MBRF1680 MBRF16100 MBRF16100 UNITS
VRRM Maximum Recur rent Peak Reverse Vol tage 30 40 50 60 80 100 150 V
VRMS Maximum RMS Vol tage 21 28 35 42 56 70 105 V
VDC Maximum DC Blocki ng Vol tage 30 40 50 60 80 100 150 V
I(AV) Maximum Average Forward
Rectified Current ( See Fig.1)
16.0 A
IFSM Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
150 A
VF Peak Forward IF=16A @TJ=25
Voltage (Note1) IF=16A @TJ=125
0.63
0.57
0.75
0.65
0.85
0.75
0.95
0.92
V
IR Maximum DC Reverse Current @TJ=25
at Rated DC Bolcking Voltage @TJ=125
0.5
15
0.5
10
0.3
7.5
0.1
5
mA
CJ Typical Junction Capacitance (Note1) 500 pF
RJC Typical Thermal Resistance (Note2)
3.0 /W
TJ Operating Temperature Range -55 to +150
TSTG Storage Temperature Range -55 to +175

NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.



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