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MBRF16150CT

Features: ·Guard ring for transient protection·Low power loss,high efficiency·High current capability,low VF·High surge capacity wheeling,and polarity protection applications·Plastic package has UL flammability classification 94V-0·Metal of silicon rectifier , majority carrier conduction·For use i...

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MBRF16150CT: Features: ·Guard ring for transient protection·Low power loss,high efficiency·High current capability,low VF·High surge capacity wheeling,and polarity protection applications·Plastic package has UL ...

MBRF16150CT Data Sheet

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Part Number:
MBRF16150CT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

·Guard ring for transient protection
·Low power loss,high efficiency
·High current capability,low VF
·High surge capacity wheeling,and polarity protection applications
·Plastic package has UL flammability classification 94V-0
·Metal of silicon rectifier , majority carrier conduction
·For use in low voltage,high frequency inverters,free


Specifications

CHARACTERISTICS
SYMBOL
MBRF
1630CT
MBRF
1640CT
MBRF
1650CT
MBRF
1660CT
MBRF
1680CT
MBRF
16100CT
MBRF
16150CT
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
30
40
50
60
80
100
150
V
Maximum RMS Voltage
VRMS
21
28
35
42
56
72
105
V
Maximum DC Blocking Voltage
VDC
30
40
50
60
80
100
150
V
Maximum Average Forward
Rectified Current ( See Fig.1)
I(AV)
16.0
A
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
IFSM
150
A
Peak Forward IF=8A @TJ=25
Voltage (Note1) IF=8A @TJ=125
IF=16A @TJ=25
IF=16A @TJ=125
VF
0.57
0.84
0.72
-
0.65
0.75
-
-
0.75
0.85
0.95
0.85
1.05
0.92
-
-
V
Maximum DC Reverse Current @TJ=25
at Rated DC Bolcking Voltage @TJ=125
IR
0.3
10
5
0.1
mA
Typical Junction Capacitance (Note2)
CJ
400
200
pF
Typical Thermal Resistance (Note3)
RJC
3.0
/W
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +175

NOTES:1.300us pulse width,2% duty cycle. 2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC. 3.Thermal resistance junction to case.




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