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MBRF1030

Features: Guard ring for transient protectionLow power loss,high efficiencyHigh current capability,low VFHigh surge capacityMetal of silicon rectifier , majority carrier conductionPlastic package has UL flammabilityFor use in low voltage,high frequency inverters,free wheeling,and polarity protecti...

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MBRF1030: Features: Guard ring for transient protectionLow power loss,high efficiencyHigh current capability,low VFHigh surge capacityMetal of silicon rectifier , majority carrier conductionPlastic package ha...

MBRF1030 Data Sheet

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Part Number:
MBRF1030
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

Guard ring for transient protection
Low power loss,high efficiency
High current capability,low VF
High surge capacity
Metal of silicon rectifier , majority carrier conduction
Plastic package has UL flammability
For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications classification 94V-0




Specifications

Symbol Type Number MBRF1030
 MBRF1040

MBRF1050

 MBRF1060 MBRF1080 MBRF10100 UNITS
VRRM Maximum Recur rent Peak Reverse Vol tage 30 40 50 60 80 100 V
VRMS Maximum RMS Vol tage 21 28 35 42 56 70 V
VDC Maximum DC Blocki ng Vol tage 30 40 50 60 80 100 V
I(AV) Maximum Average Forward
Rectified Current ( See Fig.1) 		10.0 A
IFSM Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)		 150 A
VF Peak Forward Voltage (Note1) IF=10A @TJ=25
IF=10A @TJ=125
IF=20A @TJ=25
IF=20A @TJ=125		 0.70
0.84
0.57
0.72		 0.70
0.85
0.95
0.80		 0.85
0.71
-
-		 V
IR Maximum DC Reverse Current @TJ=25
at Rated DC Bolcking Voltage @TJ=125		 0.1
15		 10
0.1		 6.0
0.1		 mA
CJ Typical Junction Capacitance (Note1) 400 1100 pF
RJC Typical Thermal Resistance (Note2)
 2.5 2.0 /W
TJ Operating Temperature Range -55 to +150
TSTG Storage Temperature Range -55 to +175
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.



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