MBRD1035CTL

Schottky (Diodes & Rectifiers) 10A 35V Low Vf

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SeekIC No. : 00194127 Detail

MBRD1035CTL: Schottky (Diodes & Rectifiers) 10A 35V Low Vf

floor Price/Ceiling Price

Part Number:
MBRD1035CTL
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/13

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Product Details

Quick Details

Product : Schottky Diodes Peak Reverse Voltage : 35 V
Forward Continuous Current : 10 A Max Surge Current : 50 A
Configuration : Dual Common Cathode Forward Voltage Drop : 0.56 V
Maximum Reverse Leakage Current : 2000 uA Operating Temperature Range : - 55 C to + 150 C
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Tube    

Description

Recovery Time :
Maximum Power Dissipation :
Mounting Style : SMD/SMT
Product : Schottky Diodes
Packaging : Tube
Forward Continuous Current : 10 A
Maximum Reverse Leakage Current : 2000 uA
Operating Temperature Range : - 55 C to + 150 C
Configuration : Dual Common Cathode
Package / Case : DPAK
Forward Voltage Drop : 0.56 V
Max Surge Current : 50 A
Peak Reverse Voltage : 35 V


Features:

• Pb−Free Package is Available
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
• Matched Dual Die Construction −May be Paralleled for High Current Output
• High dv/dt Capability
• Short Heat Sink Tap Manufactured − Not Sheared
• Very Low Forward Voltage Drop
• Epoxy Meets UL 94 V−O @ 0.125 in




Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35 A
Average Rectified Forward Current Per Leg
(At Rated VR, TC = 115°C) Per Package
IO 5.0 A
Peak Repetitive Forward Current Per Leg
(At Rated VR, Square Wave, 20 kHz, TC = 115°C)
IFRM 10 A
Non−Repetitive Peak Surge Current Per Package
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM 50 A
Storage / Operating Case Temperature Tstg, Tc −55 to +125 °C
Operating Junction Temperature TJ −55 to +125 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10000 V/s



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