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MBRB760

Features: ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0♦ Metal silicon junction majority carrier conduction♦ Low power loss, high efficiency♦ High current capability, low forward voltage drop♦ High surge capability♦ For use in ...

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MBRB760: Features: ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0♦ Metal silicon junction majority carrier conduction♦ Low power loss, high efficiencyϗ...

MBRB760 Data Sheet

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Part Number:
MBRB760
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
♦ Metal silicon junction majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability, low forward voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
♦ Guardring for overvoltage protection
♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed




Specifications

SYMBOLS MBRB735 MBRB745 MBRB750 MBRB760 UNITS
Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Volts
Maximum working peak reverse voltage VRWM 35 45 50 60 Volts
Maximum DC blocking voltage VDC 35 45 50 60 Volts
Maximum average forward rectified current (SEE FIG 1) I(AV) 7.5 Amps
Peak repetitive forward current (square wave, 20 KHZ)at TC=105°C IFRM 15.0 Amps
Peak forward surge current, 8.3ms single half sinewave superimposed on rated load (JEDEC Method) IFSM 150.0 Amps
Peak repetitive reverse surge current (NOTE 1) IRRM 1.0 0.5 Amps
Maximum instantaneous IF=7.5A, TC=25°C
forward voltage at IF=7.5A, TC=125°C
(NOTE 2) IF=15A, TC=25°C IF=15A, TC=125°C 		VF
 -
0.57
0.84
0.72		 0.75
0.65
-
-		 Volts
Maximum instantaneous reverse current at
rated DC blocking voltage TC=25°C
(NOTE 1) TC=125°C 		IR 0.1
15.0		 0.5
50.0		 mA
Voltage rate of change (rated VR) dv/dt 10,000 1,000 V/µs
Maximum thermal resistance, (NOTE 3) RJC 3.0 °C/W
Operating junction temperature range TJ -65 to +150 °C
Storage temperature range TSTG -65 to +175 °C





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