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MBRB10H100

Features: • Plastic package has Underwriters LaboratoryFlammability Classifications 94V-0• Metal silicon junction, majority carrier conduction• Low power loss, high efficiency• Guardring for overvoltage protection• For use in low voltage, high frequency inverters, fre...

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MBRB10H100: Features: • Plastic package has Underwriters LaboratoryFlammability Classifications 94V-0• Metal silicon junction, majority carrier conduction• Low power loss, high efficiency̶...

MBRB10H100 Data Sheet

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Part Number:
MBRB10H100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Plastic package has Underwriters LaboratoryFlammability Classifications 94V-0
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, freewheeling, and polarity protection applications




Specifications

Maximum Ratings (TC= 25°C unless otherwise noted)
(TC= 25°C unless otherwise noted)Parameter

 Symbol MBR10H90 MBR10H100 Unit

Maximum repetitive peak reverse voltage

 VRRM 90 100 V

Working peak reverse voltage

 VRWM 90 100 V

Maximum DC blocking voltage

 VDC 90 100 V

Maximum average forward rectified current

 IF(AV) 10 A

Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)

 IFSM 250 A
Peak repetitive reverse current at tp= 2µs, 1KHZ

 IRRM 0.5 A
Voltage rate of change (rated VR) dv/dt 10,000 V/µs

Operating junction and storage temperature range

 TJ, TSTG 65 to +175 °C

RMS Isolation voltage (MBRF type only) from terminals to
heatsink with t = 1 second, RH 30%

 VISO L4500(1)
3500(2)
1500(3)		 V





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