MBRA340T3

Recovery Time :
Maximum Power Dissipation :
Configuration : Single
Mounting Style : SMD/SMT
Product : Schottky Diodes
Packaging : Reel
Max Surge Current : 100 A
Operating Temperature Range : - 55 C to + 150 C
Forward Continuous Current : 3 A
Peak Reverse Voltage : 40 V
Forward Voltage Drop : 0.45 V
Package / Case : SMA
Maximum Reverse Leakage Current : 300 uA


Features:

• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Guardring for Stress Protection
• Pb−Free Package is Available


Specifications

Rating	Symbol	Value	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	VRRM VRWM VR	40	V
Average Rectified Forward Current (At Rated VR, TL = 100°C)	IO	3.0	A
Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)	IFSM	100	A
Storage/Operating Case Temperature	Tstg, TC	−55 to +150	°C
Operating Junction Temperature	TJ	−55 to +125	°C
Voltage Rate of Change (Rated VR, TJ = 25°C)	dv/dt	10,000	V/s

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

Description

Employing the MBRA340T3 Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.