MBR2535CTLG

Schottky (Diodes & Rectifiers) 25 A 35

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SeekIC No. : 00186278 Detail

MBR2535CTLG: Schottky (Diodes & Rectifiers) 25 A 35

floor Price/Ceiling Price

US $ .56~.89 / Piece | Get Latest Price
Part Number:
MBR2535CTLG
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.89
  • $.72
  • $.64
  • $.56
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Product : Schottky Diodes Peak Reverse Voltage : 35 V
Forward Continuous Current : 25 A Max Surge Current : 150 A
Configuration : Dual Common Cathode Forward Voltage Drop : 0.55 V
Maximum Reverse Leakage Current : 5000 uA Operating Temperature Range : - 65 C to + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Recovery Time :
Maximum Power Dissipation :
Mounting Style : Through Hole
Product : Schottky Diodes
Packaging : Tube
Package / Case : TO-220AB
Forward Voltage Drop : 0.55 V
Operating Temperature Range : - 65 C to + 150 C
Configuration : Dual Common Cathode
Max Surge Current : 150 A
Peak Reverse Voltage : 35 V
Maximum Reverse Leakage Current : 5000 uA
Forward Continuous Current : 25 A


Description

The MBR2535CTLG is designed as one kind of power rectifier that can be used in (1)power supply - output rectification; (2)power management; (3)instrumentation. And the features of this device are:(1)low forward voltage; (2)low power loss / high efficiency; (3)high surge capacity; (4)150 operating junction temperature; (5)25 A total (12.5 A per diode leg); (6)Pb-free packages are available.

The absolute maximum ratings of the MBR2535CTLG can be summarized as:(1)Peak Repetitive Reverse Voltage: 35 V;(2)Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, TC = 139°C): 25 A;(3)Non - Repetitive Peak Surge Current: 150 A;(4)Peak Repetitive Reverse Surge Current (2.0 us, 1.0 kHz): 1.0 A;(5)Storage Temperature Range: -65 to +150 °C;(6)Operating Junction Temperature: -65 to +150 °C;(7)Voltage Rate of Change (Rated VR): 10,000 V/us;(8)Controlled Avalanche Energy: 20 mJ.

The mechanical characteristics of MBR2535CTLG can be summarized as:(1)case: epoxy, molded; (2)epoxy meets UL 94, V-0 @ 0.125 in; (3)weight: 1.9 grams (approximately); (4)finish: all external surfaces corrosion resistant and terminal leads are readily solderable; (5)lead temperatures for soldering purposes: 260 max. for 10 seconds; (6)ESD rating: human body model 3B and machine model C. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationMBR2535CTLG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Diode Type Schottky
Diode Configuration1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)35V
Current - Average Rectified (Io) (per Diode)12.5V
Voltage - Forward (Vf) (Max) @ If470mV @ 12.5A
Current - Reverse Leakage @ Vr5mA @ 35V
Reverse Recovery Time (trr)-
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeThrough Hole, Radial
Package / CaseTO-220
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MBR2535CTLG
MBR2535CTLG
MBR2535CTLGOS ND
MBR2535CTLGOSND
MBR2535CTLGOS



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