Schottky (Diodes & Rectifiers) 20A 45V
MBR2045CTG: Schottky (Diodes & Rectifiers) 20A 45V
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Features: 150° C TJ operationCenter tap TO-220, D2Pak and TO-262 packagesLow forward voltage dropH...
Features: 150° C TJ operationCenter tap TO-220, D2Pak and TO-262 packagesLow forward voltage dropH...
Product : | Schottky Diodes | Peak Reverse Voltage : | 45 V |
Forward Continuous Current : | 20 A | Max Surge Current : | 150 A |
Configuration : | Dual Common Cathode | Forward Voltage Drop : | 0.84 V |
Maximum Reverse Leakage Current : | 100 uA | Operating Temperature Range : | - 65 C to + 175 C |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
The MBR2045CTG is a kind of schottky barrier rectifier(20 amperes, 45 volts) which can be applicated in power supply; output rectification; power management; instrumentation.
The features of MBR2045CTG can be summarized as (1)low forward voltage; (2)low power loss / high efficiency; (3)high surge capacity; (4)175°C operating junction temperature; (5)20 A total (10 A per diode leg); (6)Pb-Free package is available*.
The absolute maximum ratings of MBR2045CTG are (1)peak repetitive reverse voltage VRRM; working peak reverse voltage VRWM; DC blocking voltage VR: 45 V; (2)average rectified forward current IF(AV) per device/per diode (TC = 165°C): 20/10A; (3)peak repetitive forward current per diode leg (square wave, 20 kHz, TC = 163°C) IFRM: 20 A; (4)non-repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM: 150 A; (5)peak repetitive reverse surge current (2.0 s, 1.0 kHz) see figure 11 IRRM: 1.0 A; (6)storage temperature range Tstg: -65 to +175 °C; (7)operating junction temperature (Note 1) TJ: -65 to +175 °C voltage rate of change (rated VR) dv/dt 10,000 V/s(Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/RJA.).
Technical/Catalog Information | MBR2045CTG |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Diode Type | Schottky |
Diode Configuration | 1 Pair Common Cathode |
Voltage - DC Reverse (Vr) (Max) | 45V |
Current - Average Rectified (Io) (per Diode) | 10A |
Voltage - Forward (Vf) (Max) @ If | 570mV @ 10A |
Current - Reverse Leakage @ Vr | 100A @ 45V |
Reverse Recovery Time (trr) | - |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mounting Type | Through Hole, Radial |
Package / Case | TO-220AB |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MBR2045CTG MBR2045CTG MBR2045CTGOS ND MBR2045CTGOSND MBR2045CTGOS |