MBR2045CTG

Schottky (Diodes & Rectifiers) 20A 45V

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SeekIC No. : 00185091 Detail

MBR2045CTG: Schottky (Diodes & Rectifiers) 20A 45V

floor Price/Ceiling Price

US $ .39~.68 / Piece | Get Latest Price
Part Number:
MBR2045CTG
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.68
  • $.59
  • $.5
  • $.39
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Quick Details

Product : Schottky Diodes Peak Reverse Voltage : 45 V
Forward Continuous Current : 20 A Max Surge Current : 150 A
Configuration : Dual Common Cathode Forward Voltage Drop : 0.84 V
Maximum Reverse Leakage Current : 100 uA Operating Temperature Range : - 65 C to + 175 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Recovery Time :
Maximum Power Dissipation :
Mounting Style : Through Hole
Product : Schottky Diodes
Peak Reverse Voltage : 45 V
Packaging : Tube
Maximum Reverse Leakage Current : 100 uA
Package / Case : TO-220AB
Forward Continuous Current : 20 A
Operating Temperature Range : - 65 C to + 175 C
Configuration : Dual Common Cathode
Max Surge Current : 150 A
Forward Voltage Drop : 0.84 V


Description

The MBR2045CTG is a kind of schottky barrier rectifier(20 amperes, 45 volts) which can be applicated in power supply; output rectification; power management; instrumentation.

The features of MBR2045CTG can be summarized as (1)low forward voltage; (2)low power loss / high efficiency; (3)high surge capacity; (4)175°C operating junction temperature; (5)20 A total (10 A per diode leg); (6)Pb-Free package is available*.

The absolute maximum ratings of MBR2045CTG are (1)peak repetitive reverse voltage VRRM; working peak reverse voltage VRWM; DC blocking voltage VR: 45 V; (2)average rectified forward current IF(AV) per device/per diode (TC = 165°C): 20/10A; (3)peak repetitive forward current per diode leg (square wave, 20 kHz, TC = 163°C) IFRM: 20 A; (4)non-repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM: 150 A; (5)peak repetitive reverse surge current (2.0 s, 1.0 kHz) see figure 11 IRRM: 1.0 A; (6)storage temperature range Tstg: -65 to +175 °C; (7)operating junction temperature (Note 1) TJ: -65 to +175 °C voltage rate of change (rated VR) dv/dt 10,000 V/s(Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/RJA.).




Parameters:

Technical/Catalog InformationMBR2045CTG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Diode Type Schottky
Diode Configuration1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)45V
Current - Average Rectified (Io) (per Diode)10A
Voltage - Forward (Vf) (Max) @ If570mV @ 10A
Current - Reverse Leakage @ Vr100A @ 45V
Reverse Recovery Time (trr)-
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeThrough Hole, Radial
Package / CaseTO-220AB
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MBR2045CTG
MBR2045CTG
MBR2045CTGOS ND
MBR2045CTGOSND
MBR2045CTGOS



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