MBR16Hxx Selling Leads, Price trend, MBR16Hxx DataSheet download, circuit diagram from SeekIC.com

Features: • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0• Metal silicon junction, majority carrier conduction• Low forward voltage drop, low power lossand high efficiency• Guardring for overvoltage protection• For use in low voltage, ...

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SeekIC No. : 004414294 Detail

MBR16Hxx: Features: • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0• Metal silicon junction, majority carrier conduction• Low forward voltage drop, low power...

MBR16Hxx Data Sheet

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Part Number:: MBR16Hxx
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/27

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Product Details

Description

Features:

• Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
• High temperature soldering guaranteed: 250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature

Specifications

Parameter	Symbol	MBR16H35	MBR16H45	MBR16H50	MBR16H60	Unit
Maximum repetitive peak reverse voltage	V_RRM	35	45	50	60	V
Working peak reverse voltage	V_RWM	35	45	50	60	V
Maximum DC blocking voltage	V_DC	35	45	50	60	V
Max.average forward rectified current (see fig.1)	I_F(AV)	16				A
Peak repetitive forward current at TC= 150 °C (rated VR, 20 KHz sq.wave)	I_FRM	32				A
Non-repetitive avalanche energy at 25 °C, IAS= 4 A, L = 10 mH	E_AS	80				mJ
Peak forward surge current 8.3 ms single half sinewave superimposed on rated load (JEDEC Method)	I_FSM	150				A
Peak repetitive reverse surge current at tp= 2.0 µs, 1 KHZ	I_RRM	1.0		0.5		A
Peak non-repetitive reverse energy (8/20 µs waveform)	E_RSM	20				mJ
Electrostatic discharge capacitor voltage Human body model:C = 100 pF, R = 1.5 kΩ	V_C	25				kV
Voltage rate of change (rated VR)	dv/dt	10,000				V/µs
Operating junction temperature range	T_J	65 to +175				°C
Storage temperature range	T_STG	65 to +175				°C
RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1.0 second, RH 30%	V_ISOL	4500⁽¹⁾3500⁽²⁾ 1500⁽³⁾				V

MBR16Hxx

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