Recovery Time
:
Maximum Power Dissipation
:
Mounting Style
: Through Hole
Configuration
: Single
Product
: Schottky Diodes
Maximum Reverse Leakage Current
: 500 uA
Peak Reverse Voltage
: 100 V
Forward Continuous Current
: 1 A
Operating Temperature Range
: - 65 C to + 175 C
Packaging
: Bulk
Forward Voltage Drop
: 0.79 V
Package / Case
: DO-41
Max Surge Current
: 50 A
Specifications
| Rating |
Symbol |
Max |
Unit |
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage
DC Blocking Voltage |
VRRM
VRWM
VR |
100 |
V |
Average Rectified Forward Current ( R(equiv) 0.2 VR(dc), RJA=
50°C/W, P.C. Board Mounting, see Note 1, TA = 120 C) |
IO |
1.0 |
A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) |
IFSM |
50 |
A |
| Operating and Storage Junction Temperature Range |
TJ , Tstg |
-65 to +150 |
|
| Voltage Rate of Change (Rated VR ) |
dv/dt |
10 |
V/ns |
DescriptionSchottky Rectifier, 1 A MBR1100
...employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry eatures epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Parameters: | Technical/Catalog Information | MBR1100 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 790mV @ 1A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 500A @ 100V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Axial |
| Package / Case | DO-41, Axial |
| Packaging | Bulk |
| Capacitance @ Vr, F | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MBR1100
MBR1100
MBR1100OS ND
MBR1100OSND
MBR1100OS
|
MBR1100 Data Sheet
