MBR10Hxx Selling Leads, Price trend, MBR10Hxx DataSheet download, circuit diagram from SeekIC.com

Features: • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0• Metal silicon junction, majority carrier conduction• Low forward voltage drop, low power loss and high efficiency• Guardring for overvoltage protection• For use in low voltage,...

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SeekIC No. : 004414244 Detail

MBR10Hxx: Features: • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0• Metal silicon junction, majority carrier conduction• Low forward voltage drop, low power...

MBR10Hxx Data Sheet

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Part Number:: MBR10Hxx
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/27

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Product Details

Description

Features:

• Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
• High temperature soldering guaranteed:250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature

Specifications

MBR10H35

Maximum Ratings(TC= 25 °C unless otherwise noted)
Parameter	Symbol	MBR10H35	MBR10H45	MBR10H50	MBR10H60	Unit
Maximum repetitive peak reverse voltage	VRRM	35	45	50	60	V
Working peak reverse voltage	VRWM	35	45	50	60	V
Maximum DC blocking voltage	VDC	35	45	50	60	V
Maximumaverage forward rectified current (See fig.1)	IF(AV)	10				A
Peak repetitive forward current at TC= 150 °C(20 KHz sq.wave)	IFRM	20				A
Non-repetitive avalanche energy at 25 °C, IAS= 4 A, L = 10 mH	EAS	80				mJ
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method)	IFSM	150				A
Peak repetitive reverse current at tp= 2.0 µs, 1 KHZ	IRRM	1.0		0.5		A
Peak non-repetitive reverse energy (8/20 µs waveform)	ERSM	20		10		mJ
Electrostatic discharge capacitor voltage Human body model:C = 100 pF, R = 1.5 kΩ	VC	25				kV
Voltage rate of change (rated VR)	dv/dt	10,000				V/µs
Operating junction temperature range	TJ	65 to +175				°C
Storage temperature range	TSTG	65 to +175				°C
RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1.0 second, RH 30%	VISOL	4500(1) 3500(2) 1500(3)				V

Electrical Characteristics(TC= 25°C unless otherwise noted)
Parameter	Symbol	MBR10H35, MBR10H45		MBR10H50, MBR10H60		Unit
	Symbol	Typ	Max	Typ	Max
Maximum instantaneous at IF = 10A TJ =25°C forward voltage(4) at IF = 10A TJ = 125°C at IF = 20A TJ=25°C at IF = 20A TJ=125°C	VF	- 0.49 - 0.62	0.63 0.55 0.75 0.68	- 0.57 - 0.68	0.71 0.61 0.85 0.71	V
Maximum instantaneous reverse current TJ=25°C at rated DC blocking voltage(4) TJ =125°C	IR	- 4.0	100 12	- 2.0	100 12	µA mA

Thermal Characteristics(TC= 25 °C unless otherwise noted)
Parameter	Symbol	MBR	MBRF	MBRB	Unit
Maximum thermal resistance	RJC	2.0	4.0	2.0	°C/W

MBR10Hxx

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