MBR1060

Recovery Time :
Maximum Power Dissipation :
Mounting Style : Through Hole
Configuration : Single
Product : Schottky Rectifiers
Packaging : Tube
Forward Continuous Current : 10 A
Maximum Reverse Leakage Current : 100 uA
Package / Case : TO-220AC
Operating Temperature Range : - 65 C to + 150 C
Peak Reverse Voltage : 60 V
Max Surge Current : 150 A
Forward Voltage Drop : 0.95 V at 20 A


Features:

`Plastic material used carries Underwriters Laboratory
Classifications 94V-0
` Metal silicon junction, majority carrier conduction
` Low power loss, high efficiency
` High current capability, low forward voltage drop
` High surge capability
` For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
` Guardring for overvoltage protection
` High temperature soldering guaranteed:
260oC/10 seconds,0.25"(6.35mm)from case




Specifications

Product Type	Schottky
Part Number	MBR1060
Max Average Rectified Current IO (A)	10
@ Terminal Temperature TT (oC)	125
Peak Repetitive Reverse Voltage VRRM (V)	60
Peak Forward Surge Current IFSM (A)	150
Forward Voltage Drop VF (V)	0.95
@ IF (A)	10
Max Reverse Current IR (mA)	0.1
@ VR (V)	60
Total Capacitance CT (pF)	400

Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%

Type Number	Symbo	MBR 1035	MBR 1045	MBR 1050	MBR 1060	MBR 1090	MBR 10100	MBR 10200	Units
Maximum Recurrent Peak Reverse Voltage	VRRM	35	45	50	60	90	100	200	V
Maximum RMS Voltage	VRMS	24	31	35	42	63	70	140	V
Maximum DC Blocking Voltage	VDC	35	45	50	60	90	100	200	V
Maximum Average Forward Rectified Current See Fig. 1	I(AV)	10							A
Peak Repetitive Forward Current (Square Wave, 20KHz) at Tc=135	IFRM	20.0							A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method )	IFSM	150							A
Peak Repetitive Reverse Surge Current (Note 1)	IRRM	1.0		0.5					A
Voltage Rate of Change (Rated VR)	dV/dt	10,000							V/uS
Maximum Instantaneous Forward Voltage at (Note 2) IF=10A, Tc=25 IF=10A, Tc=125 IF=20A, Tc=25 IF=20A, Tc=125	VF	0.70 0.57 0.84 0.72		0.80 0.70 0.95 0.85		0.85 0.71 - -		1.05 - -	V
Maximum Instantaneous Reverse Current @ Tc =25at Rated DC Blocking Voltage (Note 2) @ Tc=125	IR	0.1 15.0				0.1 6.0		0.009 10	mA mA
Typical Junction Capacitance (Note 3)	Cj	350		280		200			pF
Maximum Thermal Resistance, Junction to Case	RJC	3.5				2.0			/W
Operating Junction Temperature Range	TJ	-65 to +150
Storage Temperature Range	TSTG	-65 to +175

Parameters:

Technical/Catalog Information	MBR1060
Vendor	Fairchild Optoelectronics Group
Category	Discrete Semiconductor Products
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	60V
Current - Average Rectified (Io)	10A
Voltage - Forward (Vf) (Max) @ If	800mV @ 10A
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	100A @ 60V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220AC
Packaging	Bulk
Capacitance @ Vr, F	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MBR1060 MBR1060