MBR10100CT

Recovery Time :
Maximum Power Dissipation :
Mounting Style : Through Hole
Product : Schottky Diodes
Packaging : Tube
Forward Continuous Current : 10 A
Maximum Reverse Leakage Current : 100 uA
Package / Case : TO-220AB
Peak Reverse Voltage : 100 V
Operating Temperature Range : - 65 C to + 150 C
Configuration : Dual Common Cathode
Max Surge Current : 120 A
Forward Voltage Drop : 0.95 V


Features:

· Metal of siliconrectifier, majonty carrier conducton
· Guard ring for transient protection
· Low power loss high efficiency
· High surge capacity, High current capability




Specifications

· Operating Temperature: -55°C to +150°C
· Storage Temperature: -55°C to +175°C

Microsemi Catalog Number	Device Marking	Maximum Recurrent Peak Reverse Voltage	Maximum RMS Voltage	Maximum DC Blocking Voltage
MBR1080CT	MBR1080CT	80V	56V	80V
MBR10100CT	MBR10100CT	100V	70V	100V

Parameters:

Technical/Catalog Information	MBR10100CT
Vendor	Diodes Inc
Category	Discrete Semiconductor Products
Diode Type	Schottky
Diode Configuration	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io) (per Diode)	10A
Voltage - Forward (Vf) (Max) @ If	850mV @ 5A
Current - Reverse Leakage @ Vr	100A @ 100V
Reverse Recovery Time (trr)	-
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220-3 (Straight Leads) Isolated, ITO-220S
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MBR10100CT MBR10100CT