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MB85R256A

Features: • Bit configuration: 32,768 words x 8 bits• Read/write durability: 1010 times/bit (Min)• Peripheral circuit CMOS construction• Operating power supply voltage: 3.0 V to 3.6 V• Operating temperature range: -40 °C to +85 °C• 28-pin, SOP flat packagePinout...

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SeekIC No. : 004413591 Detail

MB85R256A: Features: • Bit configuration: 32,768 words x 8 bits• Read/write durability: 1010 times/bit (Min)• Peripheral circuit CMOS construction• Operating power supply voltage: 3.0 V...

MB85R256A Data Sheet

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Part Number:
MB85R256A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Bit configuration: 32,768 words x 8 bits
• Read/write durability: 1010 times/bit (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage: 3.0 V to 3.6 V
• Operating temperature range: -40 °C to +85 °C
• 28-pin, SOP flat package


Pinout

Connection Diagram


Specifications

Parameter
Conditions
Rating
Units
Min
Max
Power supply voltage
VCC
0.5
+4.6
V
Input voltage
VIN
0.5
Vcc+0.5
V
Output voltage
VOUT
0.5
Vcc+0.5
V
Operating temperature
TA
40
+85
°C
Storage temperature
Tstg
40
+85
°C



Description

The MB85R256/MB85R256A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM MB85R256/MB85R256A is able to retain data without back-up battery.

The memory cells used for the MB85R256/MB85R256A has inproved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability.

The MB85R256/MB85R256A uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.




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