MB85R256 Selling Leads, Price trend, MB85R256 DataSheet download, circuit diagram from SeekIC.com

Features: • Bit configuration: 32,768 words x 8 bits• Read/write durability: 1010 times/bit (Min)• Peripheral circuit CMOS construction• Operating power supply voltage: 3.0 V to 3.6 V• Operating temperature range: -40 °C to +85 °C• 28-pin, SOP flat package•...

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SeekIC No. : 004413590 Detail

MB85R256: Features: • Bit configuration: 32,768 words x 8 bits• Read/write durability: 1010 times/bit (Min)• Peripheral circuit CMOS construction• Operating power supply voltage: 3.0 V...

MB85R256 Data Sheet

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Part Number:: MB85R256
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/27

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MB8504S064CA-102 evaluate
Features: • Un-buffered 168-pin DIMM Socket Type (Lead pitch: 1.27 mm)• Conformed to J...
MB8504S064CA-102L evaluate
Features: • Un-buffered 168-pin DIMM Socket Type (Lead pitch: 1.27 mm)• Conformed to J...
MB8504S064CA-103 evaluate
Features: • Un-buffered 168-pin DIMM Socket Type (Lead pitch: 1.27 mm)• Conformed to J...

Product Details

Description

Features:

• Bit configuration: 32,768 words x 8 bits
• Read/write durability: 1010 times/bit (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage: 3.0 V to 3.6 V
• Operating temperature range: -40 °C to +85 °C
• 28-pin, SOP flat package
• 28-pin, TSOP(1) flat package

Pinout

Connection Diagram

Specifications

Parameter	Symbol	Rating		Unit
Parameter	Symbol	Min.	Max.	Unit
Supply Voltage	V_CC	-0.5	+4.0	V
Input Voltage	V_IN	-0.5	VCC + 0.5	V
Output Voltage	V_OUT	-0.5	VCC + 0.5	V
Ambient Operating Temperature	T_A	-40	+85	°C
Storage Temperature	T_stg	-40	+85	°C

Description

The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM MB85R256 is able to retain data without back-up battery.

The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability.

The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.

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MB85R256

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