MB85R1002

Features: • Bit configuration : 65,536 words x 16 bits• Read/write endurance : 1010 times• Operating power supply voltage : 3.0 V to 3.6 V• Operating temperature range : -20 °C to +85 °C• LB and UB data byte control• 48-pin, TSOP(1) plastic packagePinoutSpecific...

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SeekIC No. : 004413589 Detail

MB85R1002: Features: • Bit configuration : 65,536 words x 16 bits• Read/write endurance : 1010 times• Operating power supply voltage : 3.0 V to 3.6 V• Operating temperature range : -20 ...

floor Price/Ceiling Price

Part Number:
MB85R1002
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Bit configuration : 65,536 words x 16 bits
• Read/write endurance : 1010 times
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : -20 °C to +85 °C
• LB and UB data byte control
• 48-pin, TSOP(1) plastic package



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Unit
Min. Max.
Supply Voltage VCC -0.5 +4.0 V
Input Voltage VIN -0.5 VCC + 0.5 V
Output Voltage VOUT -0.5 VCC + 0.5 V
Ambient Operating Temperature TA -20 +85 °C
Storage Temperature Tstg -40 +125 °C



Description

The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, MB85R1002 is able to retain data without back-up battery.

The memory cells used for the MB85R1002 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance.

The MB85R1002 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.




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