Features: • Bit configuration : 65,536 words x 16 bits• Read/write endurance : 1010 times• Operating power supply voltage : 3.0 V to 3.6 V• Operating temperature range : -20 °C to +85 °C• LB and UB data byte control• 48-pin, TSOP(1) plastic packagePinoutSpecific...
MB85R1002: Features: • Bit configuration : 65,536 words x 16 bits• Read/write endurance : 1010 times• Operating power supply voltage : 3.0 V to 3.6 V• Operating temperature range : -20 ...
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Features: • Un-buffered 168-pin DIMM Socket Type (Lead pitch: 1.27 mm)• Conformed to J...
Features: • Un-buffered 168-pin DIMM Socket Type (Lead pitch: 1.27 mm)• Conformed to J...
Features: • Un-buffered 168-pin DIMM Socket Type (Lead pitch: 1.27 mm)• Conformed to J...
Parameter | Symbol | Rating | Unit | |
Min. | Max. | |||
Supply Voltage | VCC | -0.5 | +4.0 | V |
Input Voltage | VIN | -0.5 | VCC + 0.5 | V |
Output Voltage | VOUT | -0.5 | VCC + 0.5 | V |
Ambient Operating Temperature | TA | -20 | +85 | °C |
Storage Temperature | Tstg | -40 | +125 | °C |
The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, MB85R1002 is able to retain data without back-up battery.
The memory cells used for the MB85R1002 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance.
The MB85R1002 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.