MB85R1001

Features:

• Bit configuration : 131,072 words x 8bits
• Read/write endurance : 10¹⁰ times
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : -20 °C to +85 °C
• 48-pin, TSOP (1) plastic package


Pinout




Specifications

Parameter	Symbol	Rating		Unit
		Min	Max
Supply Voltage	VCC	−0.5	+4.0	V
Input Voltage	VIN	−0.5	VCC+0.5	V
Output Voltage	VOUT	−0.5	VCC+0.5	V
Ambient Temperature	TA	−20	+85	°C
Storage Temperature	Tstg	−40	+125	°C

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.


Description

The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, MB85R1001 is able to retain data without back-up battery.

The memory cells used for the MB85R1001 has improved at least 10¹⁰ times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance.

The MB85R1001 used a pseudo - SRAM interface compatible with conventional asynchronous SRAM.