Features: • Unbuffered 144-pin SO-DIMM Socket Type (Lead pitch: 0.8 mm)• Conformed to JEDEC Standard (2 CLK)• Organization: 4,194,304 words * 64 bits• Memory: MB81F641642C (4 M * 16, 4-bank)* 4 pcs.• 3.3 V ±0.3 V Supply Voltage• All input/output LVTTL compatible...
MB8504S064CE-100: Features: • Unbuffered 144-pin SO-DIMM Socket Type (Lead pitch: 0.8 mm)• Conformed to JEDEC Standard (2 CLK)• Organization: 4,194,304 words * 64 bits• Memory: MB81F641642C (4...
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Features: • Un-buffered 168-pin DIMM Socket Type (Lead pitch: 1.27 mm)• Conformed to J...
Features: • Un-buffered 168-pin DIMM Socket Type (Lead pitch: 1.27 mm)• Conformed to J...
Features: • Un-buffered 168-pin DIMM Socket Type (Lead pitch: 1.27 mm)• Conformed to J...
Parameter |
Symbol |
Value |
Unit | |
Min. |
Max. | |||
Supply Voltage* Input Voltage* Output Voltage* Storage Temperature Power Dissipation Output Current (D.C.) |
VCC VIN VOUT TSTG PD IOUT |
0.5 0.5 0.5 55 - 50 |
+4.6 +4.6 +4.6 +125 4.0 +50 |
V V V °C W mA |
The Fujitsu MB8504S064CE-100 is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM) Module consisting of four MB8504S064CE-100 devices which organized as two banks of 4 M ×16 bits and a 2K-bit serial EEPROM on a 144-pin glass-epoxy substrate.
The MB8504S064CE-100 features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.
The MB8504S064CE-100 is optimized for those applications requiring high speed, high performance and large memory storage, and high density memory organizations.
The MB8504S064CE-100 is ideally suited for workstations, PCs, laser printers, and other applications where a simple interface is needed.