MB84VD2008-10 Selling Leads, Price trend, MB84VD2008-10 DataSheet download, circuit diagram from SeekIC.com

Features: • Power supply voltage of 2.7 to 3.6 V• High performance 100 ns maximum access time• Operating Temperature 20 to +85°C- FLASH MEMORY• Simultaneous operations Read-while Erase or Read-while-Program• Minimum 100,000 write/erase cycles• Sector erase archi...

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SeekIC No. : 004413500 Detail

MB84VD2008-10: Features: • Power supply voltage of 2.7 to 3.6 V• High performance 100 ns maximum access time• Operating Temperature 20 to +85°C- FLASH MEMORY• Simultaneous operations Read-w...

MB84VD2008-10 Data Sheet

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Part Number:: MB84VD2008-10
Supply Ability:: 5000

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Product Details

Description

Features:

• Power supply voltage of 2.7 to 3.6 V
• High performance
   100 ns maximum access time
• Operating Temperature
   20 to +85°C
- FLASH MEMORY
• Simultaneous operations Read-while Erase or Read-while-Program
• Minimum 100,000 write/erase cycles
• Sector erase architecture
   Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes.
    Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
   MB84VD2008: Top sector
   MB84VD2009: Bottom sector
• Embedded Erase^TM Algorithms
   Automatically pre-programs and erases the chip or any sector
• Embedded Program^TM Algorithms
    Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
   Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
   When addresses remain stable, automatically switch themselves to low power mode.
• Low V_CC write inhibit 2.5 V
• Erase Suspend/Resume
   Suspends the erase operation to allow a read in another sector within the same device
• Please refer to "MBM29DL800TA/BA" data sheet in detailed function
- SRAM
• Power dissipation
   Operating : 50 mA max.
    Standby : 50 A max.
• Data retention supply voltage: 2.0 V to 3.6 V
   Embedded Erase^TM and Embedded Program^TM are trademarks of Advanced Micro Devices, Inc. SHDN

Specifications

Storage Temperature ..................................................................................................55°C to +125°C
Ambient Temperature with Power Applied ..................................................................25°C to +85°C
Voltage with Respect to Ground All pins (Note) ..........................................................0.3 V to V_CCf +0.5 V
                                                                                                                                    0.3 V to V_CCs +0.5 V
V_CCf/V_CCs Supply (Note) ..............................................................................................0.3 V to +4.6 V
Note: Minimum DC voltage on input or I/O pins are 0.5 V. During voltage transitions, inputs may negativeovershoot
          V_SS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins are V_CCf +0.5 V or V_CCs
          +0.5 V. During voltage transitions, outputs may positive overshoot to V_CC +2.0 V for periods of up to 20 ns.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
                  temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

MB84VD2008-10

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