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MB84SD23280FA

Features: • Power supply voltage of 1.65 V to 1.95 V• High performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM)• Operating Temperature 30 °C to +85 °C• Package 73-ball FBGA` FLASH MEMORY• 0.17 mm process technology• Simultaneous Read/Wr...

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SeekIC No. : 004413478 Detail

MB84SD23280FA: Features: • Power supply voltage of 1.65 V to 1.95 V• High performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM)• Operating Temperature 30 °C to +85 °CR...

MB84SD23280FA Data Sheet

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Part Number:
MB84SD23280FA
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Power supply voltage of 1.65 V to 1.95 V
• High performance
   70 ns maximum access time (Flash)
   70 ns maximum access time (SRAM)
• Operating Temperature
   30 °C to +85 °C
• Package 73-ball FBGA
` FLASH MEMORY
• 0.17 mm process technology
• Simultaneous Read/Write operation (Dual Bank)
• FlexBankTM *1
   Bank A: 16M bit (16KB * 4 and 64KB *31)
   Bank B: 16M bit (64KB *32)
   Bank C: 16M bit (64KB * 32)
   Bank D: 16M bit (16KB *4 and 64KB *31)
• Minimum 100,000 program/erase cycles
• Sector Erase Architecture
   Four 8K words, a hundred twenty-eight 32K words sectors.
   Any combination of sectors can be concurrently erased. Also supports full chip erase.
• WP Input Pin
   At VIL, allows protection of all sectors, regardless of sector protection/unprotection status
   At VIH, allows removal of sector protection
• Embedded EraseTM *2 Algorithms
   Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM *2 Algorithms
   Automatically writes and verifies data at specified address
•Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
   When address remain stable, the device automatically switches itself to low power mode
• Low VCC write inhibit
• Erase Suspend/Resume
   Suspends the erase operation to allow a read data and/or program in another sector within the same device
  resumes the erase operation
• Sector Protection
   Software command sector locking
• Please Refer to "MBM29BS64LF" Datasheet in Detailed Function
`SRAM
• Power Dissipation
   Operating : 50 mA Max
   Standby :15 A Max
• Power Down Features using CE1s and CE2s
• Data Retention Supply Voltage: 1.0 V to 1.95 V
• CE1s and CE2s Chip Select
• Byte Data Control: LB(DQ7 to DQ0), UB (DQ15 to DQ8)
*1: FlexBankTM is a trademark of Fujitsu Limited, Japan.
*2: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. SHDN


Pinout

Connection Diagram


Specifications

Parameter Symbol Rating Unit
Min. Max.
Storage Temperature Tstg -40 +125 °C
Ambient Temperature with Power Applied TA -30 +85 °C
Voltage with Respect to Ground All pins * VIN -0.3 VCCf + 0.1 V
VOUT -30 VCCs + 0.1 V
VCCf Supply * VCCf -0.2 +2.5 V
VCCs Supply * VCCs -0.5 +2.5 V

* : Minimum DC voltage on input or l/O pins are 0.5 V. During voltage transitions, inputs may negative overshoot
     VSS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on input and l/O pins are VCC +0.5 V. During voltage
     transitions, outputs may positive overshoot to VCC +2.0 V for periods of up to 20 ns.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
                   temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.


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