Position: Home  > All Categories> Integrated Circuits (ICs) > MB82DP04184E

MB82DP04184E

Features: • Asynchronous SRAM Interface• Fast Access Time : tAA = tCE = 65 ns Max• 8 words Page Access Capability : tPAA = 20 ns Max• Low Voltage Operating Condition : VDD = 2.6 V to 3.1 V• Wide Operating Temperature : TA = 0 °C to + 70 °C• Byte Control by LB an...

product image

MB82DP04184E Picture
See larger image
SeekIC No. : 004413472 Detail

MB82DP04184E: Features: • Asynchronous SRAM Interface• Fast Access Time : tAA = tCE = 65 ns Max• 8 words Page Access Capability : tPAA = 20 ns Max• Low Voltage Operating Condition : VDD = ...

MB82DP04184E Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MB82DP04184E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Asynchronous SRAM Interface
• Fast Access Time : tAA = tCE = 65 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Low Voltage Operating Condition : VDD = 2.6 V to 3.1 V
• Wide Operating Temperature : TA = 0 °C to + 70 °C
• Byte Control by LB and UB
• Low Power Consumption : IDDA1 = 40 mA Max
                                             IDDS1 = 200 A Max
• Various Power Down mode : Sleep
8M-bit Partial
16M-bit Partial
• Shipping Form : Wafer, Chip, 71-ball plastic FBGA


Specifications

Parameter
Symbol
Value
Unit
Min
Max
Voltage of VDD Supply Relative to VSS*
VDD
− 0.5
+ 3.6
V
Voltage at Any Pin Relative to VSS*
VIN, VOUT
− 0.5
+ 3.6
V
Short Circuit Output Current
IOUT
− 50
+ 50
mA
Storage Temperature
TSTG
− 55
+ 125
oC



Description

The Fujitsu MB82DP04184E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format.

This MB82DP04184E is suited for mobile applications such as Cellular Handset and PDA.
*: FCRAM is a trademark of Fujitsu Limited, Japan.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Tapes, Adhesives
803
AC452-2
Line Protection, Backups
BX0023
A20B-1008-0550
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Test Equipment
TOP853
TOP2005
View more