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MB82D01171B-60L

Features: • Asynchronous SRAM Interface• 1 M word ´ 16 bit Organization• Fast Random Access Time : tAA = tCE = 60 ns, 70 ns• Low Power Consumption : IDDS1 = 100 mA (L version) , 70 mA (LL version)• Wide Operating Conditions : VDD = +2.3 V to +2.7 V- +2.7 V to +3...

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SeekIC No. : 004413469 Detail

MB82D01171B-60L: Features: • Asynchronous SRAM Interface• 1 M word ´ 16 bit Organization• Fast Random Access Time : tAA = tCE = 60 ns, 70 ns• Low Power Consumption : IDDS1 = 100 mA (L v...

MB82D01171B-60L Data Sheet

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Part Number:
MB82D01171B-60L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Asynchronous SRAM Interface
• 1 M word ´ 16 bit Organization
• Fast Random Access Time : tAA = tCE = 60 ns, 70 ns
• Low Power Consumption : IDDS1 = 100 mA (L version) , 70 mA (LL version)
• Wide Operating Conditions : VDD = +2.3 V to +2.7 V
-  +2.7 V to +3.1 V
-  +3.1 V to +3.5 V
-  TA = -30 °C to +85 °C
• Byte Write Control
• 8 words Address Access Capability
• Power Down Control by CE2


Pinout

Connection Diagram


Specifications

Parameter
Conditions
Rating
Units
Min
Max
Voltage of VCCQ Supply Relative to VSS
VCCQ
0.5
+3.6
V
Voltage at Any Pin Relative to VSS
VIN
0.5
+3.6
V
VOUT
0.5
+3.6
mA
Short Circuit Output Current
IOUT
-50
+50
W
Storage Temperature
TSTG
55
+125
°C



Description

The Fujitsu MB82D01171B-60L is a CMOS Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. This MB82D01171B-60L is suited for mobile applications such as Cellular Handset and PDA.




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