Features: • Single +3.3 V Supply ±0.3 V tolerance• LVTTL compatible I/O interface• 4 K refresh cycles every 64 ms• Four bank operation• Burst read/write operation and burst read/single write operation capability• Programmable burst type, burst length, and CAS la...
MB81F64842D-102: Features: • Single +3.3 V Supply ±0.3 V tolerance• LVTTL compatible I/O interface• 4 K refresh cycles every 64 ms• Four bank operation• Burst read/write operation and b...
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Parameter |
Symbol |
Value |
Unit |
Voltage of VCC Supply Relative to VSS Voltage at Any Pin Relative to VSS Short Circuit Output Current Power Dissipation Storage Temperature |
VCC, VCCQ VIN, VOUT IOUT PD TSTG |
0.5 to +4.6 0.5 to +4.6 50 to +50 1.3 55 to +125 |
V V mA W °C |
The Fujitsu MB81F64842D-102 is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 8-bit format. The MB81F64842D-102 features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F64842D-102 SDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM.
The MB81F64842D-102 is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed.