Features: • Single +3.3 V Supply ±0.3 V tolerance• LVTTL compatible I/O• 4 K refresh cycles every 65.6 ms• Four bank operation• Burst read/write operation and burst read/single write operation capability• Standard and low power versions• Programmable burst...
MB81F64842C-102: Features: • Single +3.3 V Supply ±0.3 V tolerance• LVTTL compatible I/O• 4 K refresh cycles every 65.6 ms• Four bank operation• Burst read/write operation and burst rea...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Value | Unit |
Voltage of VCC Supply Relative to VSS Voltage at Any Pin Relative to VSS Short Circuit Output Current Power Dissipation Storage Temperature |
VCC, VCCQ VIN, VOUT IOUT PD TSTG |
0.5 to +4.6 0.5 to +4.6 50 to +50 1.0 55 to +125 |
V V mA W °C |
The Fujitsu MB81F64842C-102 is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 8-bit format. The MB81F64842C-102 features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F64842C-102 SDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a standard DRAM.
The MB81F64842C-102 is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed.