PinoutSpecifications Parameter Symbol Value Unit Voltage of VCC Supply Relative to VSS VCC, VCCQ 0.5 to +4.6 V Voltage at Any Pin Relative to VSS VIN, VOUT 0.5 to +4.6 V Short Circuit Output Current IOUT ±50 mA Power Dissipation PD 1.3 W Storage Temperature Tstg...
MB81F643242C-10: PinoutSpecifications Parameter Symbol Value Unit Voltage of VCC Supply Relative to VSS VCC, VCCQ 0.5 to +4.6 V Voltage at Any Pin Relative to VSS VIN, VOUT 0.5 to +4.6 V Short...
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Parameter | Symbol | Value | Unit |
Voltage of VCC Supply Relative to VSS | VCC, VCCQ | 0.5 to +4.6 | V |
Voltage at Any Pin Relative to VSS | VIN, VOUT | 0.5 to +4.6 | V |
Short Circuit Output Current | IOUT | ±50 | mA |
Power Dissipation | PD | 1.3 | W |
Storage Temperature | Tstg | 55 to +125 | °C |
The Fujitsu MB81F643242C-10 is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81F643242C-10 features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F643242C-10 SDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM.
The MB81F643242C-10 is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed.