MB81F643242B-10FN-X

Features: • Single +3.3 V Supply ±0.3 V tolerance• LVTTL compatible I/O interface• 4 K refresh cycles every 16 ms• Four bank operation• Burst read/write operation and burst read/single write operation capability• Programmable burst type, burst length, and CAS la...

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SeekIC No. : 004413453 Detail

MB81F643242B-10FN-X: Features: • Single +3.3 V Supply ±0.3 V tolerance• LVTTL compatible I/O interface• 4 K refresh cycles every 16 ms• Four bank operation• Burst read/write operation and b...

floor Price/Ceiling Price

Part Number:
MB81F643242B-10FN-X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Single +3.3 V Supply ±0.3 V tolerance
• LVTTL compatible I/O interface
• 4 K refresh cycles every 16 ms
• Four bank operation
• Burst read/write operation and burst read/single write operation capability
• Programmable burst type, burst length, and CAS latency
• Auto-refresh (every 3.9 s)
• CKE power down mode
• Output Enable and Input Data Mask



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Minimum
Unit
Voltage of Vcc supply relative to Vss
VCC,VCCQ
0.5 to +4.6
V
Voltage at Any Pin Relative to Vss
VIN,VOUT
0.5 to +4.6
V
Short Circuit Output Current
IOUT
±50
mA
Power Dissipation
PD
1.3
W
Operating Temperature
TSTG
-55 to125
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.


Description

The Fujitsu MB81F643242B-10FN-X is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81F643242B-10FN-X features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F643242B-10FN-XSDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM.

The MB81F643242B-10FN-X is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed.




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