Features: • Single +3.3 V Supply ±0.3 V tolerance• LVTTL compatible I/O interface• 4 K refresh cycles every 16 ms• Four bank operation• Burst read/write operation and burst read/single write operation capability• Programmable burst type, burst length, and CAS la...
MB81F643242B-10FN-X: Features: • Single +3.3 V Supply ±0.3 V tolerance• LVTTL compatible I/O interface• 4 K refresh cycles every 16 ms• Four bank operation• Burst read/write operation and b...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Minimum |
Unit |
Voltage of Vcc supply relative to Vss |
VCC,VCCQ |
0.5 to +4.6 |
V |
Voltage at Any Pin Relative to Vss |
VIN,VOUT |
0.5 to +4.6 |
V |
Short Circuit Output Current |
IOUT |
±50 |
mA |
Power Dissipation |
PD |
1.3 |
W |
Operating Temperature |
TSTG |
-55 to125 |
The Fujitsu MB81F643242B-10FN-X is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81F643242B-10FN-X features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F643242B-10FN-XSDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM.
The MB81F643242B-10FN-X is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed.