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MB81ES653225-12/-12L

Features: · 1M words ´ 32 bits ´ 2 banks Organization· Low Power Supply (VDD = VDDQ = 1.8 V ± 0.15 V)· 1.8 V CMOS I/O Interface· 8K Refresh Cycles every 32 ms· Auto- and Self- Refresh· 2 Banks Operation· Programmable Burst Type, Burst Length, and CAS Latency· Burst Read/Write Operation...

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SeekIC No. : 004413448 Detail

MB81ES653225-12/-12L: Features: · 1M words ´ 32 bits ´ 2 banks Organization· Low Power Supply (VDD = VDDQ = 1.8 V ± 0.15 V)· 1.8 V CMOS I/O Interface· 8K Refresh Cycles every 32 ms· Auto- and Self- Refresh· 2...

MB81ES653225-12/-12L Data Sheet

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Part Number:
MB81ES653225-12/-12L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

·  1M words ´ 32 bits ´ 2 banks Organization
·  Low Power Supply (VDD = VDDQ = 1.8 V ± 0.15 V)
·  1.8 V CMOS I/O Interface
·  8K Refresh Cycles every 32 ms
·  Auto- and Self- Refresh
·  2 Banks Operation
·  Programmable Burst Type, Burst Length, and CAS Latency
·  Burst Read/Write Operation and Burst Read/Single Write Operation Capability
·  Programmable Page Length
·  Programmable Partial Array Self Refresh (PASR)
·  Programmable Temperature Compensated Self Refresh (TCSR)
·  Deep Power Down Mode
·  Extended Temperature Operation MB81ES653225-12 : 0 °C to 85 °C MB81ES653225-12L : -25 °C to 85 °C
·  CKE Power Down Mode
·  Byte Control Capability by Data Mask (DQM)
·  FCRAM Disable Function for TEST
·  FCRAM Self Burn-in Function for TEST
·  FCRAM BIST (Built In Self Test) Function for TEST


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