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MB81ES653225-12

Features: • 1 M word × 32 bit × 2 banks organization• Low power supply - VDD : + 1.8 V ± 0.15 V - VDDQ : + 1.8 V ± 0.15 V• 1.8 V-CMOS I/O interface• 8 K refresh cycles every 32 ms• Auto-and Self-refresh• Two banks operation• Burst read/write operation and ...

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SeekIC No. : 004413447 Detail

MB81ES653225-12: Features: • 1 M word × 32 bit × 2 banks organization• Low power supply - VDD : + 1.8 V ± 0.15 V - VDDQ : + 1.8 V ± 0.15 V• 1.8 V-CMOS I/O interface• 8 K refresh cycles every ...

MB81ES653225-12 Data Sheet

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Part Number:
MB81ES653225-12
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• 1 M word × 32 bit × 2 banks organization
• Low power supply
    - VDD : + 1.8 V ± 0.15 V
   - VDDQ : + 1.8 V ± 0.15 V
• 1.8 V-CMOS I/O interface
• 8 K refresh cycles every 32 ms
• Auto-and Self-refresh
• Two banks operation
• Burst read/write operation and burst read/single write operation capability
• Programmable burst type, burst length, and CAS Latency
• Programmable page length function
• Programmable Partial Array Self Refresh (PASR)
• Programmable Temperature Compensated Self Refresh (TCSR)
• Deep power down mode
• Extended temperature operation
   - MB81ES653225-12 : From 0 °C to +85 °C (Ta)
   - MB81ES653225-12L : From −25 °C to +85 °C (Ta)
• CKE power down mode
• Output enable and input data mask
• Disable function for TEST
• Self burnin function for TEST
• Built In Self Test (BIST) function for TEST


Specifications

Parameter Symbol Rating Unit
Min. Max.
Supply Voltage Relative to VSS VDD, VDDQ − 0.5 + 3.0 V
Voltage at Any Pin Relative to VSS VIN, VOUT − 0.5 + 3.0 V
Short Circuit Output Current IOUT − 50 + 50 mA
Power Dissipation PD - 1.0 W
Storage Temperature TSTG − 55 + 125 °C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
                  temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.


Description

The Fujitsu MB81ES653225-12 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81ES653225-12 features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.

The MB81ES653225-12 is utilized using a Fujitsu advanced FCRAM core technology and designed for low power consumption and low voltage operation than regular synchronous DRAM (SDRAM) .

The MB81ES653225-12 is dedicated for SiP (System in a package) , and ideally suited for various embedded/ consumer applications including digital AVs and image processing where a large band width and low power consumption memory is needed.

* : FCRAM is a trademark of Fujitsu Limited, Japan.




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