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MB81ES173225-15-X

Features: • FCRAM core with Single Data Rate SDRAM interface• 512 K word ×16 bit ×2 bank or 256 K word×32 bit × 2 bank organization• Single +1.8 V Supply ±0.15 V tolerance• CMOS I/O interface• Programmable burst type, burst length, and CAS latency Burst type : Sequent...

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SeekIC No. : 004413446 Detail

MB81ES173225-15-X: Features: • FCRAM core with Single Data Rate SDRAM interface• 512 K word ×16 bit ×2 bank or 256 K word×32 bit × 2 bank organization• Single +1.8 V Supply ±0.15 V tolerance• C...

MB81ES173225-15-X Data Sheet

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Part Number:
MB81ES173225-15-X
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• FCRAM core with Single Data Rate SDRAM
   interface
• 512 K word ×16 bit ×2 bank or 256 K word×32 bit
   × 2 bank organization
• Single +1.8 V Supply ±0.15 V tolerance
• CMOS I/O interface
• Programmable burst type, burst length, and CAS latency
   Burst type : Sequential Mode, Interleave Mode
   Burst length : 1, 2, 4, 8, full column (64 :×16 bit, 32 : ×32 bit)
   CAS latency
   MB81ES171625/173225-15-X
   CL = 1 (Min tCK = 30 ns, Max 33.3 MHz)
   CL = 2 (Min tCK = 15 ns, Max 66.7 MHz)
• 2 K refresh cycles every 4 ms
• Auto- and Self-refresh
• CKE power down mode
• Output Enable and Input Data Mask
• Burst Stop command at full column burst
• Burst read/write
• 66.7 MHz Clock frequency


Specifications

Parameter Symbol Rating Unit
Min. Max.
Voltage of VCC Supply Relative to VSS VDD, VDDQ -0.5 +3.0 V
Voltage at Any Pin Relative to VSS VIN, VOUT -0.5 +3.0 V
Short Circuit Output Current IOUT -13 +13 mA
Storage Temperature TSTG -55 +125 °C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
                  temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.


Description

The Fujitsu MB81ES173225-15-X is a Fast Cycle Random Access Memory (FCRAM*) containing 16,777,216 bit memory cells accessible in a 2´512K´16 bit / 2´256K´32 bit format. The MB81ES173225-15-X features a fully synchronous operation referenced to a positive edge clock same as that of SDRAM operation, whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.

The MB81ES173225-15-X is utilized using a Fujitsu advanced FCRAM core technology and designed for low power consumption and low voltage operation than regular synchronous DRAM (SDRAM).

The MB81ES173225-15-X is dedicated for SiP (System in a Package), and ideally suited for various embedded/ consumer applications including digital AVs, and image processing where a large band width and low power consumption memory is needed.

* : FCRAM is a trademark of Fujitsu Limited, Japan.




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