Features: • Single +3.3 V Supply ±0.3 V tolerance• LVTTL compatible I/O interface• Two-bank operation• Programmable burst type, burst length, and CAS latency• 4 K refresh cycles every 64 ms• Auto- and Self-refresh• CKE power down mode• Output Enable ...
MB81E161622-10/-12: Features: • Single +3.3 V Supply ±0.3 V tolerance• LVTTL compatible I/O interface• Two-bank operation• Programmable burst type, burst length, and CAS latency• 4 K refre...
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Parameter |
Conditions |
Rating |
Units | |
Min |
Max | |||
Voltage of VCCQ Supply Relative to VSS |
VCCQ |
0.5 |
to+4.6 |
V |
Voltage at Any Pin Relative to VSS |
VIN, VOUT |
0.5 |
to+4.6 |
V |
Short Circuit Output Current |
IOUT |
50 |
to+50 |
mA |
Power Dissipation |
PD |
-- |
1.3 |
W |
Storage Temperature |
TSTG |
55 |
to+125 |
°C |
The Fujitsu MB81E161622-10/-12 is a Fast Cycle Random Access Memory (FCRAM*) containing 16,777,216 memory cells accessible in a 16-bit format. The MB81E161622-10/-12 features a fully synchronous operation referenced to a positive edge clock, whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.
The MB81E161622-10/-12 is utilized using a Fujitsu advanced FCRAM core technology and designed to improve the random access performance and the complexity of controlling regular synchronous DRAM (SDRAM) which require many wait state due to long latency constraints.
The MB81E161622-10/-12 is ideally suited for various embedded/consumer applications including digital AVs, printers and file storage where a large band width memory is needed.