Features: • Single +2.5 V Supply ±0.2 V tolerance• LVTTL compatible I/O interface• 4 K refresh cycles every 64 ms• Four bank operation• Burst read/write operation and burst read/single write operation capability• Programmable burst type, burst length, and CAS la...
MB811L643242B-10: Features: • Single +2.5 V Supply ±0.2 V tolerance• LVTTL compatible I/O interface• 4 K refresh cycles every 64 ms• Four bank operation• Burst read/write operation and b...
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Parameter | Symbol | Value | Unit |
Voltage of VDD Supply Relative to VSS | VDD, VDDQ | 0.5 to +3.6 | V |
Voltage at Any Pin Relative to VSS | VN, VOUT | 0.5 to +3.6 | V |
Short Circuit Output Current | IOUT | ±50 | mA |
Power Dissipation | PD | 1.0 | W |
Storage Temperature | TSTG | 55 to +125 | °C |
The Fujitsu MB811L643242B-10 is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 32-bit format. The MB811L643242B features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB811L643242B-10 SDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a standard DRAM.
The MB811L643242B-10 is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed.