MAX8890_1161878

IN_, EN_ to GND......................................................-0.3V to +6V
OUT_, BP to GND ......................................-0.3V to (V_IN_ + 0.3V)
Output Short-Circuit Protection (Note A) ......................indefinite
Continuous Power Dissipation (T_A = +70°C)
12-Pin 4 x 4 QFN (derate 16.9mW/°C above +70°C) .1349mW
Operating Temperature Range ........................-40°C to +85°C
Junction Temperature............................................... .....+150°C
Storage Temperature Range ........................ .-65°C to +150°C
Lead Temperature (soldering, 10s) ................................+300°C

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note A: As long as the maximum continuous power dissipation rating is not exceeded, the output can be shorted ndefinitely.

The MAX8890_1161878 is a power-management IC intended for cellular handsets using a single lithium-ion (Li+) cell battery with input voltages from +2.5V to +5.5V. The IC MAX8890_1161878 contains three identical, low-noise, LDO (LDO)linear regulators to provide all of the supply voltage requirements for the RF portion of the handset.

The first LDO of MAX8890_1161878 is intended to power the transmitter,receiver, and synthesizer. The second LDO is intended to power the TCXO, and high-power voltage-controlled oscillators (VCOs). The third LDO is intended to power the UHF offset VCO.

Each LDO of MAX8890_1161878 has its own individual enable (ON/OFF) con-trol to maximize design flexibility. The reference is pow-ered on if any of the enable inputs (EN1, EN2, EN3) are logic high. The high-accuracy output voltage of each LDO is preset at an internally trimmed voltage (1.8V to 3.3V in 50mV increments). Each LDO is capable of sup-plying 100mA with a low 50mV dropout and is opti-mized for low noise and high crosstalk-isolation.Designed with internal P-channel MOSFET pass transis-tors, the MAX8890_1161878's low 180µA operating supply cur-rent is independent of load.

Other features of MAX8890_1161878 include short-circuit and thermal-over-load protection. The MAX8890 is available in a com-pact, high-power, 12-pin 4mm ✕ 4mm QFN package with a metal pad on the underside.