MAX2233

Features: · 800MHz to 1000MHz Frequency Range· 250mW (+24dBm) Output Power at 915MHz from +3.6V Supply· +2.7V to +5.5V Single-Supply Operation· 44% Power-Added Efficiency· 24dB Power Gain· 24dB Analog Gain-Control Range (MAX2232)· Three Levels of Digitally Programmed Power Gain in 10dB Steps (MAX2...

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SeekIC No. : 004409587 Detail

MAX2233: Features: · 800MHz to 1000MHz Frequency Range· 250mW (+24dBm) Output Power at 915MHz from +3.6V Supply· +2.7V to +5.5V Single-Supply Operation· 44% Power-Added Efficiency· 24dB Power Gain· 24dB Anal...

floor Price/Ceiling Price

Part Number:
MAX2233
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

· 800MHz to 1000MHz Frequency Range
· 250mW (+24dBm) Output Power at 915MHz from +3.6V Supply
· +2.7V to +5.5V Single-Supply Operation
· 44% Power-Added Efficiency
· 24dB Power Gain
· 24dB Analog Gain-Control Range (MAX2232)
· Three Levels of Digitally Programmed Power Gain in 10dB Steps (MAX2233)
· Programmable RF Power Envelope Ramping (MAX2232)
· Thermal Shutdown
· Programmable Thermal Shutdown Timeout Period
· 0.2µA Low-Power Shutdown Mode
· Low ÆVWSR in Standby and Shutdown Modes



Application

·900MHz ISM Band
·Digital Cordless Phones
·Wireless Data
·FM Analog Transmitters
·868MHz European ISM Band



Pinout

  Connection Diagram


Specifications

VCC to GND...........................................................-0.3V to +6.5V
SHDN, CTRL, D0, D1 to GND .......................-0.3V to (VCC +0.3V)
IRFIN .................................................................................10mA
RFIN Power (50 AC-coupled source). ..........................+10dBm
Output Load VSWR. ..............................................................6:1
Continuous Power Dissipation (TA = +70°C)
16-Pin PQSOP (derate 80mW/°C above +70°C) ................3W
Operating Temperature Range ......................-40°C to +85°C
Storage Temperature Range ........................-65°C to +150°C
Lead Temperature (soldering, 10sec) ..........................+300°C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.



Description

The MAX2232/MAX2233 low-voltage, silicon RF power amplifiers (PAs) are designed for use in the 900MHz ISM band. They operate from a single +2.7V to +5.5V supply, allowing them to be powered directly from a 3- cell NiCd or a 1-cell Lithium-Ion battery. The devices typically deliver 250mW (+24dBm) of output power at 915MHz from a single +3.6V supply, or 150mW (+22dBm) from a single +2.7V supply. At +24dBm output power, power-added efficiency (PAE) is 44%.

The MAX2232/MAX2233 provide 24dB of gain, which is adjustable over a continuous 24dB span via the analog gain-control pin of the MAX2232 or in two 10dB steps via the 2-bit programmable gain-control DAC of the MAX2233. An external capacitor sets the RF output power envelope ramp time, reducing spurious emissions during power-up and power-down by providing a gradual change in output power (MAX2232).

The MAX2232/MAX2233 feature a low-power shutdown mode, which typically draws less than 1µA of supply current, saving power during "idle slots" in time-division multiple-access (TDMA) systems. The ÆVSWR of the RF input in shutdown mode relative to normal operation is 1.2:1. The devices also feature a thermal shutdown function, enabling the PA to protect itself from excessive temperature conditions that could damage the IC. A capacitor to ground limits thermal cycling by setting a thermal shutdown timeout period.

The MAX2232/MAX2233 are available in a space-saving, thermally enhanced 16-pin power-QSOP (PQSOP) package.




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