MAX15024

The MAX15024A and MAX15025A/C accept transistorto-transistor (TTL)input logic levels while the MAX15024B and MAX15025B/D accept CMOS-input logic levels. High sourcing/sinking peak currents, a low propagation delay, and thermally enhanced packages make the devices ideal for high-frequency and high-power circuits. The MAX15024/MAX15025 single/dual, high-speed MOSFET gate drivers are capable of operating at frequencies up to 1MHz with large capacitive loads. The MAX15024/ MAX15025 operate from a 4.5V to 28V supply. A separate output driver supply input enhances flexibility and permits a soft-start of the power MOSFETs used in synchronous rectifiers. The MAX15024/MAX15025 are available in 10-pin TDFN packages and are specified over the -40°C to +125°C automotive temperature range. It includes internal source-and-sink output transistors with independent outputs allowing for control of the external MOSFET's rise and fall time. The MAX15024 is a single gate driver capable of sinking an 8A peak current and sourcing a 4A peak current. The MAX15025 is a dual gate driver capable of sinking a 4A peak current and sourcing a 2A peak current. An integrated adjustable LDO voltage regulator provides gatedrive amplitude control and optimization.

The features of MAX15024 can be summarized as (1)8A peak sink current/4A peak source current (MAX15024); (2)4A peak sink current/2A peak source current (MAX15025); (3)low 16ns propagation delay; (4)4.5 V to 28V supply voltage range; (5)on-board adjustable LDO for gate-drive amplitude control and optimization; (6)separate output driver supply; (7)independent source and sink outputs; (8)matched delays between inverting and noninverting inputs;(9)matched delays between channels (MAX15025); (10)CMOS or TTL logic-level inputs with hysteresis for noise immunity; (11)-40°C to +125°C operating temperature range; (12)thermal-shutdown protection; (13)1.95W thermally enhanced TDFN power packages MAX15024/MAX15025.

The absolute maximum ratings of MAX15024 are (1)VCC to GND:-0.3V to +30V; (2)REG to GND:-0.3V to the lower of +22V or (VCC + 0.3V); (3)DRV to PGND: -0.3V to +22V; (4)IN_: -0.3V to +22V; (5)FB/SET to GND: -0.3V to +6V; (6)P_OUT to DRV: -22V to +0.3V; (7)N_OUT to PGND: -0.3V to +22V; (8)OUT1, OUT2 to PGND:-0.3V to (VDRV + 0.3V); (9)PGND to GND: -0.3V to +0.3V; (10)P_OUT, N_OUT continuous source/sink current*: 200mA; (11)OUT1, OUT2 continuous source/sink current*:200mA; (12)continuous power dissipation (TA = +70°C)10-Pin TDFN, Single-Layer Board (derate 18.5mW/°C above +70°C): 1481.5mW; (13)junction-to-case thermal resistance (Note 1): 8.5°C/W; (14)10-Pin TDFN, multilayer board (derate 24.4mW/°C above +70°C): 1951.2mW; (15)junction-to-case thermal resistance (Note 1): 8.5°C/W; (16)operating temperature range: -40°C to +125°C; (17)junction temperature:+150°C; (18)storage temperature range: -65°C to +150°C; (19)lead temperature (soldering, 10s): +300°C; (20)soldering temperature (reflow): +260°C.